Impact of Š110‹ uniaxial strain on n-channel In0.15Ga0.85As high electron mobility transistors
نویسندگان
چکیده
This letter reports on a study of the impact of 110 uniaxial strain on the characteristics of InGaAs high electron mobility transistors HEMT by bending GaAs chips up to a strain level of 0.4%. Systematic changes in the threshold voltage and intrinsic transconductance were observed. These changes can be well predicted by Schrödinger–Poisson simulations of the one-dimensional electrostatics of the device that include the piezoelectric effect, Schottky barrier height change, and sub-band quantization change due to strain. The effect of 110 strain on the device electrostatics emerges as a dominant effect over that of transport in the studied InGaAs HEMTs. © 2009 American Institute of Physics. doi:10.1063/1.3273028
منابع مشابه
Impact of 110 uniaxial strain on n-channel In0.15Ga0.85As high electron mobility transistors
This paper reports on a study of the impact of <110> uniaxial strain on the characteristics of InGaAs high electron mobility transitors (HEMT) by bending GaAs chips up to a strain level of 0.4%. Systematic changes in the threshold voltage and intrinsic transconductance were observed. These changes can be well predicted by Schrödinger-Poisson simulations of the one-dimensional electrostatics of ...
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